TB10S [BL Galaxy Electrical]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
TB10S
型号: TB10S
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

文件: 总2页 (文件大小:41K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
TB2S---TB10S  
BL  
Reverse Voltage: 200 - 1000V  
Forward Current: 0.8,1.0A  
SILICON BRIDGE RECTIFIERS  
FEATURES  
.
This series is UL recognized under Component Index,  
file number E239431  
TBS  
5.0± 0.15  
.
.
.
.
.
Glass passivated chip junction  
Plastic materrial has U/L flammability classification 94v-O  
High surge overload rating: 30A peak  
Save space on printed circuit boards  
High temperature soldering guaranteed:  
260°C/10 seconds at 5 lbs. (2.3 kg) tension  
BL  
4.4± 0.15  
6.5± 0.2  
MECHANICAL DATA  
0.65± 0.05  
.
Case: Molded plastic body over passivated junctions  
0.6± 0.1  
4.0± 0.1  
0.25± 0.05  
.
Terminals: Plated leads solderable per MIL-STD-750,  
Method 2026  
Polarity: Polarity symbols marked on body  
.
Dimensions in inches and (millimeters)  
Mounting Position: Any  
Weight:  
.
Dimensions in millimeters  
.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate by 20%.  
Symbol  
TB2S  
TB4S  
TB6S  
TB8S  
TB10S  
Parameter  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRWS  
VDC  
V
V
V
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum DC blocking voltage  
1000  
0.81)  
Maximum average forward output current  
TL=100°C  
A
IF(AV)  
1.02)  
Peak forward surge current  
8.3ms single half sine-wave  
superimposed on rated load  
IFSM  
A
30  
Maximum instantaneous  
forward voltage at 0.4A  
V
0.95  
VF  
IR  
Maximum reverse current @TA=25°C  
at rated DC blocking voltage  
Typical thermal resistance junction to lead  
On aluminum substrate  
μA  
10  
25  
62.5  
80  
RθJL  
RθJA  
°C/W  
On glass-epoxy substrate  
Operating junction temperature range  
Storage temperature range  
-55---+150  
-55---+150  
°C  
°C  
TJ  
TSTG  
www.galaxycn.com  
NOTES:  
1). On glass epoxy P.C.B.  
2). On aluminum substrate  
Document Number 0287187  
1.  
BLGALAXY ELECTRICAL  
RATINGS AND CHARACTERISTIC CURVES  
TB2S---TB10S  
FIG.1 TYPICAL FORWARD CHARACTERISTICS  
FIG.2 FORWARD DERATING CURVE  
1.0  
1.0  
Aluminum Substrate  
0.4  
0.1  
0.75  
0.5  
GLASS  
EPOXY  
P.C.B  
0.25  
RESISTIVE OR INDUCTIVE LOAD  
0.01  
0
0.7 0.8 0.9  
1.0 1.1 1.2 1.3 1.4 1.5  
0
25  
50  
75  
100  
125  
150  
Instantaneous Forward Voltage, ( V )  
Ambient Temperature, (°C )  
FIG.3 TYPICAL REVERSE CHARACTERISTICS  
FIG.4 PEAK FORWARD SURGE CURRENT  
35  
30  
100000  
10000  
1000  
25  
20  
15  
10  
T
A
=100°  
C
100  
10  
T
A
=25°C  
5
0
1.0  
0
20  
40  
60  
80 100 120 140  
1
10  
100  
Percent Of Rated Peak Reverse Voltage, %  
Number Of Cycles At 60H  
z
www.galaxycn.com  
Document Number 0287187  
2.  
BLGALAXY ELECTRICAL  

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